Single-Period PPLN Crystal Chips
- QPM Period: 4.0 µm – 200 µm (Customizable)
- QPM Temperature: 25℃ – 200℃
- Flatness: λ/6 @ 633 nm
- Coating: Anti-Reflection (AR) or High-Reflection (HR) coatings available on input/output facets.
- Material Options: In addition to standard Lithium Niobate (LN) substrates, we also offer Magnesium Oxide (MgO) doped Lithium Niobate. This significantly enhances the optical damage threshold (photorefractive damage resistance) while retaining high nonlinear conversion efficiency, making the PPLN ideal for high-power laser systems and stable room-temperature operation.
- Dimensions: Fully customizable.
Nd:YVO4 + PPLN Optically Contacted Bonded Chips
This composite chip integrates a laser gain medium with a nonlinear crystal for a compact, integrated optical engine.
- Nd:YVO4 (Front End): As the laser gain medium, it absorbs external pump light (typically from an 808 nm laser diode) and generates fundamental infrared laser light at 1064 nm. Nd:YVO4 is chosen for its high absorption and conversion efficiency, as well as its linearly polarized output, making it an excellent core for compact lasers.
- Optical Contacting Interface: The two crystals are bonded via atomic-level molecular forces without any air gaps or chemical adhesives. This ensures the 1064 nm laser passes from the Nd:YVO4 into the PPLN with virtually no reflection or scattering loss.
- PPLN (Rear End): Acting as the nonlinear optical crystal, it receives the 1064 nm infrared laser and efficiently converts it into other wavelengths (e.g., frequency doubling to 532 nm green light, or other wavelengths via OPO/DFG).
Selected Typical Products
| Product list |
Type |
QPM Period |
Thickness |
| S-1064-SHG |
1064nm SHG |
6.97 µm |
0.5, 1, 2, 3 mm |
| S-1550-SHG |
1550nm SHG |
19.60 µm |
0.5, 1, 2, 3 mm |
| S-1580-SHG |
1580nm SHG |
20.22 µm |
0.5, 1, 2, 3 mm |
| S-I-1064-SHG |
NdYVO4+PPLN 1064nm SHG |
6.97 µm |
0.5, 1, 2, 3 mm |
| …… |
…… |
…… |
…… |
Typical Application Scenarios
- 1064 nm SHG (Green Light Generation):
- Chip Specs: MgO:PPLN substrate, QPM period 6.97 µm.
- Dimensions: 2.0 (W) × 1.0 (T) × 1.2 (L) mm.
- 1560 nm SHG (Telecom Band Conversion):
- Chip Specs: MgO:PPLN substrate, QPM period 19.6 µm.
- Dimensions: 1.5 (W) × 1.0 (T) × 50 (L) mm.
- 808 nm Pumped Green Laser (All-in-One Module):
- Chip Specs: Nd:YVO4 + PPLN bonded crystal, QPM period 6.97 µm.
- Dimensions: 2.0 (W) × 2.0 (T) × 3.3 (L) mm.
