Single-Period PPLN Crystal Chips

Basic Structure

QPMPeriod:                  4.0µm~200µm
WavelengthRange:      330nm~5.5μm
QPMTemperature:      25℃–200℃
Flatness:                         λ/6@633nm
Coating:                          Anti-Reflection(AR)/High-Reflection(HR)/Filter
MaterialOptions:          Standard Lithium Niobate(LN)/MgO doped Lithium Niobate.

Nd:YVO4+PPLNOpticallyContactedBondedChips

Thiscompositechipintegratesalasergainmediumwithanonlinearcrystalforacompact,integratedopticalengine.

• Nd:YVO4 (Front End): As the laser gain medium, it absorbs external pump light (typically from an 808 nm laser diode) and generates fundamental infrared laser light at 1064 nm. Nd:YVO4 is chosen for its high absorption and conversion efficiency, as well as its linearly polarized output, making it an excellent core for compact lasers.
• Optical Contacting Interface:The two crystals are bonded via atomic-level molecular forces without any air gaps or chemical adhesives. This ensures the 1064 nm laser passes from the Nd:YVO4 into the PPLN with virtually no reflection or scattering loss.
• PPLN (Rear End): Acting as the nonlinear optical crystal, it receives the 1064 nm infrared laser and efficiently converts it into other wavelengths (e.g., frequency doubling to 532 nm green light, or other wavelengths via OPO/DFG).

SelectedTypicalProducts

Typical Application Scenarios

 1064nmSHG(GreenLightGeneration):

ChipSpecs:MgO:PPLNsubstrate,QPMperiod6.97µm.

Dimensions:2.0(W)×1.0(T)×1.2(L)mm.

 1550nmSHG(TelecomBandConversion):

ChipSpecs:MgO:PPLNsubstrate,QPMperiod19.6µm.

Dimensions:1.5(W)×1.0(T)×50(L)mm.

 808nmPumpedGreenLaser(All-in-OneModule):

ChipSpecs:Nd:YVO4+PPLNbondedcrystal,QPMperiod6.97µm.

Dimensions:2.0(W)×2.0(T)×3.3(L)mm.